JNTHU Material:basic electrical & electronics engineering

R16
BASIC CONCEPTS OF ELECTRICAL CIRCUITS AND SINGLE PHASE AC CIRCUITS ELECTRICAL CIRCUITS
R-L-C parameters,voltage and current,independent and dependent sources,source transformation-V-I relationship for passive elements,kirchhoff’s laws, network reduction techniques-series,parallel,series-parallel,star-to-delta,delta-to-star transformation,nodal analysis.
SINGLE Phase AC Circuits
R.M.S and average values,form factor,strady state analysis of series,parallel and series-parallel combinations of R,L and C with sinusoidal excitation,concept of reactance,impedance,susceptance and admittance-phase and phase difference,concept of power factor,j-notation,complex and polar forms of representation.
RESONANCE
series resonsnce and parallel resonance circuits,concept of bandwith and Q factor.
NETWORK THEOREMS
thevenin’s,norton’s maximum power transfer,superposition and reciprocity theorems for DC and AC excitations.
P-N JUNCTION DIODE
principle of operation.diode equation,volt-ampere characteristics,temperature dependence,ideal versus practical,static and dynamic resistances equivalent circuit, load line analysis,diffusion and transition capacitamces.
Zener diode:Characteristics
RECTIFIERS AND FILTERS
P-N junction as a rectifier-half wave rectifier,ripple factor-full wave rectifier,bridge rectifier,harmonic components in rectifier circuits,filters-inductor filters,L-section filters,section filters.
BIPOLAR JUNCTION TRANSSISTOR (BJT)
construction,priciple of operation,amplifying action,common base and common collector configuration,transistor biasing and stabilization-operating point.DC and AC load loines,biasing-fixed bias,emitter feedback bias,collector to emitter feedback bias.bias stability,stabilization against variation in V and bias compensation using diodes and transsistors.
TRANSISTOR CONFIGURATION
hybrid model,determination of h-parameters from transistor characteristics,analysis of CE,CB and CC configuration using h-parameters,comparison of CE,CB and CC configurations.
JUNCTION FIELD EFFECT TRANSISTOR
construction,princeple of operation,pinch-off violtage,volt-ampere characteristic, comparison of BJT and FET,biasing FET.

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r13 [subject id=”2171″ regulation=”r13″]

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